fe a ? f o ? l o ? gl ? e a ? fa ? l e me ? c a ? t e ? pp r ? ma x rati n curr e 1 m surface m a tures o r surface m o o w profile p a ass passivat e a sy to pick a n st reverse re c e ad free in c o chanica l a se: smaf e rminals: so l r ox. weight : x imum rat i n gs at 25c am b e nt derate by 2 0 easured with i f = m ount fast r o unted appli c a ckage e d chip jun t n d place c overy time o mply with e l data l derable per m : 27mg 0.00 0 i ngs and el e b ient temperat u 0 %. 0.5 a, i r = 1 a, i r ecovery r c ations t ion e u rohs 20 m il-std-7 5 0 86oz e ctrical cha r u re unless othe r i rr = 0.25 a ectifiers 11/65/eu di 5 0, method 2 r acteristics r wise specified. 2 m reverse vo l rectives 2 026 single phase h a m easured at 1m h 1 ? of ? 3 ? l tage - 50 to a lf-wave 60 h z h z and applied re v 1000 v f z , resistive or in v erse voltage of 4 orward cu r ductive load, f o 4 v d.c r rent - 1 a o r capacitive lo a ? a d ?
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pa c plas c kage o tic surface m o utline m ounted pac k k a g e; 2 leads 3 ? of ? 3 ? smaf ? ?
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